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The splitting of impurity d-states in zincblende crystalsBIERNACKI, S. W.Physica status solidi. B. Basic research. 1985, Vol 130, Num 1, pp K59-K63, issn 0370-1972Article

SIMPLE THEORETICAL ESTIMATES OF THE ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINC-BLENDE AND WURTZITE TYPE SEMICONDUCTORS.VAN VECHTEN JA.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 423-429; BIBL. 55 REF.Article

THE CRYSTAL IONICITY OF THE ZINCBLANDE AND ROCKSALT COMPOUNDS AS A FUNCTION OF THE VALENCE BAND GAP.LOUIS E; YNDURAIN F.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 16; PP. L303-307; BIBL. 17 REF.Article

Static and dynamical valence charge and bond charge properties of zincblende structure compoundsPIETSCH, U.Physica status solidi. B. Basic research. 1985, Vol 128, Num 2, pp 439-451, issn 0370-1972Article

Born-von Karman cell model for deep impuritiesBIERNACKI, S. W.Physica status solidi. B. Basic research. 1984, Vol 125, Num 2, pp 805-814, issn 0370-1972Article

Application of the linear-analytic tetrahedra method of zone integration to nonlinear response functionsMOSS, D. J; SIPE, J. E; VAN DRIEL, H. M et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 2, pp 1153-1158, issn 0163-1829Article

BOND CHARGE MODEL FOR THE TRANSVERSE DYNAMIC EFFECTIVE CHARGE AND THE PIEZOELECTRIC CONSTANT OF ZINCBLENDE-TYPE CRYSTALS.HUBNER K.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 1; PP. 223-232; ABS. ALLEM.; BIBL. 21 REF.Article

STRUCTURE FACTORS OF SPHALERITE CRYSTALS WITH ACCOUNT OF COVALENT-IONIC BOND.SIROTA NN; OLEKHNOVICH AI.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 11; PP. 1277-1282; ABS. RUSSE; BIBL. 6 REF.Article

MODULATED SPECTROSCOPY OF ZINCBLENDE SEMICONDUCTORS. CALCULATION OF PIEZOMODULATION PARAMETERS FOR INDIRECT SEMICONDUCTORS.MATHIEU H; AUVERGNE D; MERLE P et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 72; NO 2; PP. 609-616; ABS. FR.; BIBL. 20 REF.Article

LATTICE DYNAMICS OF ZINCBLENDE STRUCTURE COMPOUNDS USING DEFORMATION-DIPOL MODEL AND RIGID ION MODELKUNC K; NIELSEN OH.1979; COMPUTER PHYS. COMMUNIC.; NLD; DA. 1979; VOL. 16; NO 2; PP. 181-197; BIBL. 16 REF.Article

LOCALIZED MODES INDUCED BY MASS SUBSTITUTION IN CRYSTALS OF ZINC BLENDE STRUCTURE.SEBASTIAN R; SAVARI RAJ GA.1976; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1976; VOL. 14; NO 8; PP. 623-626; BIBL. 10 REF.Article

ZUR RELATIVEN STABILITAET DER ZINKBLENDE- UND WURTZIT-STRUKTUR IN EPITAXIESCHICHTEN. = STABILITE RELATIVE DES STRUCTURES BLENDE (ZN) ET WURTZITE DANS LES COUCHES EPITAXIQUESKUHN G; HUBNER K; DAWERITZ L et al.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 8; PP. K73-K75; BIBL. 8 REF.Article

DEFORMATION DIPOLE MODEL AND LATTICE DYNAMICS OF ZINC-BLENDE-STRUCTURE COMPOUNDS.KUNC K; BALKANSKI M; NUSIMOVICI MA et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 10; PP. 4346-4355; BIBL. 36 REF.Article

STRUCTURE OF THE VALENCE BANDS OF ZINC-BLENDE-TYPE SEMICONDUCTORS.PANTELIDES ST; HARRISON WA.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 8; PP. 3006-3021; BIBL. 40 REF.Article

RELATION BETWEEN ELASTIC TENSORS OF WURTZITE AND ZINC-BLENDE STRUCTURE MATERIALSMARTIN RM.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 12; PP. 4546-4553; BIBL. 27 REF.Serial Issue

High-pressure phase transitions in diamond and zinc-blende semiconductorsCHELIKOWSKY, J. R.Physical review. B, Condensed matter. 1987, Vol 35, Num 3, pp 1174-1180, issn 0163-1829Article

Second-order susceptibility and parametric dispersion in noncentrosymmetric crystalsSEN, P; SEN, P. K.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7148-7153, issn 0163-1829Article

The dielectric constant in narrow-gap semiconductorsTRZECIAKOWSKI, W; BAJ, M.Solid state communications. 1984, Vol 52, Num 7, pp 669-671, issn 0038-1098Article

Effect of nonrandomness on the phonons in mixed InP1-xAsxAHUJA, G; GUPTA, H. C; TIWARI, L. M et al.The Journal of chemical physics. 1983, Vol 79, Num 3, pp 1416-1418, issn 0021-9606Article

The quasienergy spectrum of semiconductors with direct band gaps in the laser fieldNGUYEN VINH QUANG.Czechoslovak journal of physics. 1985, Vol 35, Num 1, pp 86-94, issn 0011-4626Article

Electronic band structures for zinc-blende and wurtzite CdSCHANG, K. J; FROYEN, S; COHEN, M. L et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4736-4743, issn 0163-1829Article

SCATTERING ON SHORT-RANGE POTENTIALS IN SEMICONDUCTORS WITH A NARROW ENERGY GAP.LITWIN STASZEWSKA E; SZYMANSKA W.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 74; NO 2; PP. K89-K92; BIBL. 6 REF.Article

PREPARATION AND STRUCTURAL INVESTIGATION OF COMPOUNDS OF THE TYPE IN3-AGAAX3Y WHERE X=S,SE, Y=P,AS AND A=1,2.ROBBINS M; LAMBRECHT VG JR.1975; MATER. RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 5; PP. 331-334; BIBL. 6 REF.Article

PIEZOELECTRIC COUPLING AND DISLOCATIONS IN III-V COMPOUNDSBOOYENS H; VERMAAK JS.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4302-4306; BIBL. 11 REF.Article

NUCLEAR QUADRUPOLAR SPIN-LATTICE RELAXATION IN ZINC-BLENDE LATTICES BY ACOUSTIC PHONONS.MCNEIL JA.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 11; PP. 4714-4722; BIBL. 16 REF.Article

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